That for operation in the up mode the present invention is fully self-aligned two-way InGap / GaAs double-heterojunction bipolar transistor and a method of manufacturing the same, and more particularly, the one of the element-emitter on-operation by the up mode, and at the same time the collector completely self-aligned two-way InGap / GaAs double-heterojunction bipolar transistor and as it relates to a process for the preparation, in accordance with the full self-alignment bidirectional InGap / GaAs double-heterojunction bipolar transistor and a method of manufacturing the same according to the present invention, that one of the transistor elements emitter-up mode and the collector - because it delivers to operate at the same time as the up mode, the integrated circuit requires it implements high-speed multi-function circuit to select the mode of operation of the transistor element is facilitated according to the design, when the operator to create a transistor obtain the transistor By giving to use a method that selectively etching the respective layers which ensure the reliability of the etching and the planarization process, and at the same time, the lift of the one-manufacturing process and prepared by Cycle because the deposition of each metal in the active area through the off process there are excellent effects that can reduce the time.
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