Broad Bandwidth, Large Dynamic Range Intermediate Growth Temperature GaAs MSM Photodetectors

摘要

Metal-semiconductor-metal (MSM) photodetectors are detectors of choice for their low cost of fabrication, high sensitivity, low dark current, and monolithic integrability with other microwave and millimeter wave devices. Low Temperature Grown (LTMBE) III-V semiconductors such as GaAs, In_(52) Al_(48)As , and In_(53)Ga_(47)As display growth temperature dependent recombination lifetimes and have been used in various MSM structures. There have been limited published studies however, of applications of intermediate growth temperature (250-500℃) MBE III-V semiconductors.