对基于InGaAs材料体系的金属-半导体-金属(metal-semiconductor-metal,MSM)光电探测器进行设计,并对其暗电流、光电流、电容以及截止频率等性能参数进行仿真.通过添加InAlAs肖特基势垒增强层,将探测器的暗电流减小到了pA量级.仿真结果表明,探测器在光照下有明显的光响应,通过合理设计器件结构,探测器的工作频率可以达到1.5 THz.制备了探测器样品,并对其暗电流和光响应进行了测试,测试结果与仿真结果基本吻合.%An InGaAs-metal-semiconductor-metal (MSM) photodetector was designed with interdigitated planar structure. Theoretical models were used to plot the variations of the dark current, the photocurrent, the capacity, and the cut-off frequency of the photodetector as a function of bias voltage and the inter-electrode distance. The dark current of the detector was restricted in orders of pA by adding InAlAs Schottky barrier. The simulation results show that the detector has obvious light response. Under certain circumstances, the working frequency of the detector can reach 1.5 THz. Moreover,the samples of detector were fabricated, the dark current and photo response of the samples were tested. The test results are coincident well with the simulation results.
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