Study on the Effect Mechanism of the Bipolar Junction Transistor Caused by ESD

摘要

In order to study the electrostatic discharge (ESD) electromagnetic pulse (EMP) to effect mechanism of bipolar junction transistors, systematic ESD injection experiments have been carried on high-frequency low-power transistors, such as 3DG81C, by using ESD model of the human body. Based on the software of Medici, the simulation model of bipolar transistor was established. Through simulation analysis, it is found that the most sensitive port of this kind of devices to ESD is CB junction. Through failure analysis of the devices, the electromagnetic damage mechanism of this kind of transistor is thermal damage which was caused by the thermal secondary breakdown, and the failure modes of transistor are electrical parameter drift, short circuit and functional failure.