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Effects of Size Nonuniformity on the Optical Transitions in a set of Realistic In_xGa_(1-x)N/GaN Quantum Dots, having a Gaussian Distribution

机译:尺寸不均匀性对一组具有高斯分布的实际In_xGa_(1-x)N / GaN量子点中光学跃迁的影响

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摘要

The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic Ⅲ-Ⅴ QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of In_xGa_(1-x)N/GaN QD systems on the dot size distribution. The dots were approximated as elongated rectangular boxes having finite potentials at the boundaries. The optical transitions and absorption spectra of In_xGa_(1-x)N/GaN QDs that have a square base and the variation of the height is Gaussian, are computed and analyzed
机译:由于状态密度的性质,预计半导体量子点(QD)的吸收光谱为一系列类似于δ函数的离散线。在现实的Ⅲ-Ⅴ量子点系统中,吸收光谱是每个点的贡献的叠加,并且通过考虑高斯尺寸分布来模拟整体行为。在本文中,我们研究并提出了In_xGa_(1-x)N / GaN QD系统吸收光谱的高斯性质对点尺寸分布的依赖性。这些点近似为在边界处具有有限电势的细长矩形框。计算并分析了具有正方形基数且高度变化为高斯的In_xGa_(1-x)N / GaN QD的光学跃迁和吸收光谱

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