Ground state transition energies of electron and hole in biased In_xGa_(1-x)N/GaN quantum dots

摘要

We are interested in our study of the Ⅲ-Ⅴ nitrides to the In_xGa_(1-x)N/GaN quantum dots, where x = 17.5% denotes the indium concentration. The adopted model to describe these Ⅲ-Ⅴ nitride quantum dots is that of In_xGa_(1-x)N truncated cones of radius r_c lying on wetting layer, both buried into GaN matrix. This model is consistent with recent experimental works. We examine the internal electric field and radius r_c of the quantum dots effects on the ground state transition energies of the electron and the hole. Our results are in sound agreement with recent experimental data.