Integrated Resistors with RF capabilities in Deep Sub-micron Silicon Technologies : Technology, Design, Characterization and Modeling

机译：深亚微米硅技术中具有RF功能的集成电阻器：技术，设计，表征和建模

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RF characteristics of integrated polycristaline silicon resistors (poly-resistors) readily available in silicon technologies are investigated. A "semi-distributed" model consisting of a number of cells with physical elements is proposed and validated. Good overlays between measured and simulated data are obtained for an array of poly-resistors with different dimensions for three available poly-resistor options.

机译：研究了在硅技术中容易获得的集成聚cristaline硅电阻器（poly-resistors）的RF特性。提出并验证了“半分布式”模型，该模型由多个具有物理元素的单元组成。对于三种可用的多晶电阻选项，对于具有不同尺寸的多晶电阻阵列，可以在测量和模拟数据之间获得良好的覆盖。

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《15th European Passive Components Symposium, Oct 15th-19th, 2001, Copenhagen, Denmark》|2001年|p.160-164|共5页
会议地点 Copenhagen(DK)
作者
Snezana Jenei; Stefaan Decoutere; Martina Da Rold; Bart Nauwelaers;
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作者单位

IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Integrated Resistors with RF capabilities in Deep Sub-micron Silicon Technologies : Technology, Design, Characterization and Modeling

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