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Transconductance/drain current based distortion analysis for analog CMOS integrated circuits

机译:用于模拟CMOS集成电路的基于跨导/漏极电流的失真分析

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This paper proposes a technique to analyze distortion in analog CMOS integrated circuits. The proposed technique captures a transistor's nonlinearity using a two-dimensional Taylor series with coefficients that depend on the transconductance-to-current ratio (gm/ID) of a transistor. To explore the effectiveness of the proposed technique, a common-source amplifier is designed. The harmonics of the amplifier are calculated using both the gm/ID technique and Cadence's periodic steady state (PSS) analysis over a wide range of gm/ID. The results indicate a close match (i.e. a discrepancy less than 2 dB from gm/ID=8 to 30) and show that the proposed technique can indeed be incorporated in a gm/ID design flow.
机译:本文提出了一种分析模拟CMOS集成电路失真的技术。所提出的技术使用二维泰勒级数捕获晶体管的非线性,该二维泰勒级数的系数取决于晶体管的跨导电流比(gm / ID)。为了探索所提出技术的有效性,设计了一种共源放大器。在广泛的gm / ID范围内,使用gm / ID技术和Cadence的周期性稳态(PSS)分析都可以计算出放大器的谐波。结果表明紧密匹配(即,从gm / ID = 8到30的差异小于2 dB),并表明提出的技术确实可以并入gm / ID设计流程中。

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