首页> 外国专利> MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS

MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE CHARACTERISTICS OF TWO-TERMINAL MEMORY CELLS

机译:多层导电金属氧化物结构和促进双端存储单元的增强性能特性的方法

摘要

A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can include a first layer of CMO including mobile oxygen ions, and a second layer of CMO formed in contact with the first layer of CMO to cooperate with the first layer of CMO to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. At least one layer of an insulating metal oxide that is an electrolyte to the mobile oxygen ions and configured as a tunnel barrier is formed in contact with the second layer of CMO.
机译:一种存储单元,包括具有至少两层导电金属氧化物(CMO)的双端可重写非易失性存储元件,其反过来可以包括包括移动氧离子的第一层CMO,以及与第一层CMO接触形成的第二层CMO,以与第一层CMO配合以形成离子阻挡层。离子障碍屏障被配置为抑制移动离子子集的运输或扩散,以增强记忆效应和记忆细胞的循环耐力。与第二层CMO接触形成至少一层绝缘金属氧化物,该绝缘金属氧化物是可移动氧离子的电解质并配置为隧道屏障。

著录项

  • 公开/公告号US2022190036A1

    专利类型

  • 公开/公告日2022-06-16

    原文格式PDF

  • 申请/专利权人 HEFEI RELIANCE MEMORY LIMITED;

    申请/专利号US202217687900

  • 发明设计人 JIAN WU;RENE MEYER;

    申请日2022-03-07

  • 分类号H01L27/24;H01L45;

  • 国家 US

  • 入库时间 2024-06-14 23:14:16

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