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BOTTOM SELECT GATE CONTACTS FOR CENTER STAIRCASE STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES
BOTTOM SELECT GATE CONTACTS FOR CENTER STAIRCASE STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES
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机译:三维存储设备中中心阶梯结构的底部选择门触点
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摘要
A three-dimensional (3D) memory device and a fabricating method for forming the same are disclosed. The 3D memory device can include an alternating conductor/dielectric layer stack disposed on a substrate, a first staircase structure and a second staircase structure formed in the alternating conductor/dielectric layer stack, a staircase bridge extending in a first direction and electrically connecting the first staircase structure and the second staircase structure, and a first bottom select gate segment covered or partially covered by the staircase bridge. The first bottom select gate segment can include an extended portion extending in a second direction different from the first direction.
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