Three-dimensional memory device with short-free source select gate contact via structure and method of making the same

摘要

Electrical short caused by misalignment of source select level contact via structure and support pillar structures can be prevented by modifying the pattern of the support pillar structures such that the support pillar structures are omitted from the area in which source select gate contact via structures are formed. The insulating layer at the level overlying the source select level electrically conductive layer can have a sufficient thickness to prevent deformation during formation of the backside recesses. A minimum lateral separation distance between the source select level contact via structure and the support pillar structures is greater than any minimum lateral separation distance between the word line level contact via structures and the support pillar structures.