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METHOD FOR FLATTENING A SURFACE ON AN EPITAXIAL LATERAL GROWTH LAYER
METHOD FOR FLATTENING A SURFACE ON AN EPITAXIAL LATERAL GROWTH LAYER
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机译:在外延横向生长层上展平表面的方法
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摘要
A method for flattening a surface on an epitaxial lateral overgrowth (ELO) layer, resulting in obtaining a smooth surface with island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers are formed by stopping the growth of the ELO layers before they coalesce to each other. Then, a growth restrict mask is removed before at least some III-nitride device layers are grown. Removing the mask decreases an excess gases supply to side facets of the island-like III-nitride semiconductor layers, which can help to obtain a smooth surface on the island-like III-nitride semiconductor layers. The method also avoids compensation of a p-type layer by decomposed n-type dopant from the mask, such as Silicon and Oxygen atoms.
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