LIGHT-emitting HALF-LEADER ELEMENT AND LIGHT-emitting HALF-LEADER ELEMENT

摘要

A semiconductor light-emitting element (20) includes: a semiconductor stack (30) including an n-type layer (32) and a p-type layer (36) and having at least one n exposure portion (30e) being a recess where the n-type layer (32) is exposed; a p wiring electrode layer (42) on the p-type layer (36); an insulating layer (44) (i) continuously covering inner lateral surfaces (30s) of at least one n exposure portion (30e) and part of a top surface of the p wiring electrode layer (42) and (ii) having an opening portion (44a) that exposes the n-type layer (32); an n wiring electrode layer (46) disposed above the p-type layer (36) and the p wiring electrode layer (42) and in contact with the n-type layer (32) in the opening portion (44a); and at least one first n connecting member (51). At least one first n connecting member (51) is connected to the n wiring electrode layer (46) in at least one first n terminal region (51r). The n wiring electrode layer (46) and the p-type layer (36) are disposed below at least one first n terminal region (51r).