SPIN TRANSISTORS BASED ON VOLTAGE-CONTROLLED MAGNON TRANSPORT IN MULTIFERROIC ANTIFERROMAGNETS

摘要

Voltage-controlled spin field effect transistors ("spin transistors") and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.