MAGNON SPIN VALVE, MAGNON SENSOR, MAGNON FIELD EFFECT TRANSISTOR, MAGNON TUNNEL JUNCTION AND MAGNON MEMORY

摘要

The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.