MAGNON SPIN VALVE DEVICE, MAGNON SENSOR, MAGNON FIELD EFFECT TRANSISTOR, MAGNON TUNNEL JUNCTION, AND MAGNON MEMORY

摘要

To provide a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction, and a magnon memory.SOLUTION: A magnon spin valve device includes a first ferromagnetic insulating layer, a nonmagnetic conductive layer provided on the first ferromagnetic insulating layer, and a second ferromagnetic insulating layer provided on the nonmagnetic conductive layer.SELECTED DRAWING: Figure 1