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INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES
INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES
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机译:基于单极掺杂N型隧道结构中基于间带隧穿的红外光发射器
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摘要
A unipolar-doped light emitting diode or laser diode is described. The diode includes a bottom region having an n-type layer, a top region having an n-type layer, and a middle region between the top and bottom regions having at least one material different from the top or bottom region forming two or more heterojunctions. The top and bottom regions create light emission by interband tunneling-induced photon emission. Systems including the unipolar-doped diode including LIDAR are also taught.
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