PRECURSOR FOR FORMATION OF THIN FILM, PREPARATION METHOD THEREFOR, AND METHOD FOR FORMING THIN FILM COMPRISING SAME

摘要

The present invention relates to a precursor for the formation of a thin film, a preparation method therefor, and a method for forming a thin film comprising same and, more specifically, to a precursor for the formation of a thin film, a preparation method therefor, and a method for forming a thin film comprising same, wherein the precursor is a liquid under conditions of 20℃ and 1 bar and comprises 20 to 100 wt% of a coordination compound and 0 to 80 wt% of an alkyl cyanide with an alkyl having 1 to 15 carbon atoms, the coordination compound being represented by chemical formula 1 below: [chemical formula 1] MXnLmYz (M is niobium (Nb), tungsten (W), or molybdenum (Mo); X is a halogen element; n is an integer of 1 to 6; L is an alkyl cyanide with an alkyl having 1 to 15 carbon atoms or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and being substituted with at least one nitrogen (N), oxygen (O), phosphorus (P), or sulfur (S); m is an integer of 1 to 3; Y that is bound is an amine; z is an integer of 0 to 4; and n+z is an integer of 3 to 6). According to the present invention, there is an effect of providing a precursor for the formation of a thin film, a preparation method therefor, and a method for forming a thin film comprising same, wherein the precursor is in a liquid state at room temperature and is highly volatile and thus shows a very high deposition rate and is easy to handle when injected into a thin film deposition chamber, and especially, the precursor has excellent thermal stability and thus enables the formation of a thin film with high purity and excellent step coverage.