METAL PRECURSOR FOR FORMING THIN FILM, THIN FILM COMPOSITION COMPRISING THE SAME AND METHOD FOR FORMING THIN FILM THEREOF

摘要

The present invention relates to a metal precursor for forming a thin film, a composition for forming a thin film including the same, and a method of manufacturing a thin film using the same, and in more detail, the following Chemical Formula 1 [Formula 1] (In Formula 1, M is a Group 4 transition metal, R ₁ to R ₅ are each independently hydrogen or an alkyl group having 1 to 3 carbon atoms, and one of a and b is a single bond and the others are double bonds.) It relates to a metal precursor for forming a thin film including a compound to be formed, a composition for forming a thin film including the same, and a method of manufacturing a thin film using the same. According to the present invention, the thermal stability of the metal precursor for thin film formation is excellent, so that the process stability of the high-temperature deposition process is improved, and as a composition for forming a thin film, thermal stability, volatility and viscosity are improved by including a specific solvent together with the metal precursor. As a result, a uniform thin film can be formed through a high-temperature process, and step coverage is greatly improved.