GROUP IV METAL ELEMENT-CONTAINING COMPOUND, PREPARATION METHOD THEREFOR, PRECURSOR COMPOSITION COMPRISING SAME COMPOUND FOR FILM FORMATION, AND FILM FORMING METHOD USING SAME COMPOSITION

摘要

Provided are a novel Group IV metal element-containing compound, a preparation method for the Group IV metal element-containing compound, a precursor composition comprising the Group IV metal element-containing compound for film formation, and a method for formation of a Group IV metal element-containing film by using the Group IV metal element-containing compound. An atomic layer deposition method using a novel Group IV metal element-containing compound according to embodiments of the present application has the advantage of being able to form a Group IV metal element-containing film at a higher temperature than conventionally known Group IV metal element-containing compounds.