TRANSISTOR ELEMENT METHOD OF FACBRICATING THE SAME AND TERNARY INVERTER DEVICE INCLUDING THE SAME

摘要

The transistor includes a gate electrode extending in a first direction, a channel pattern passing through the gate electrode in a second direction crossing the first direction, a gate insulating film provided between the channel pattern and the gate electrode, and on both sides of the gate electrode a pair of source/drain patterns provided in the , the channel pattern and the constant current forming pattern are electrically connected to a pair of source/drain patterns.