TRANSISTOR ELEMENT, TERNARY INVERTER DEVICE INCLUDING THE SAME, AND METHOD OF FACBRICATING THE SAME

摘要

The transistor device includes a substrate, a fin structure extending in a direction parallel to the upper surface of the substrate on the substrate, a source region and a drain region provided on the fin structure, a constant current forming layer provided under the fin structure, both sides of the upper portion of the fin structure and a gate insulating film provided on the top surface, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided between the source region and the drain region on the fin structure, and the constant current forming layer generates a constant current between the drain region and the substrate. and the constant current is independent from the gate voltage applied to the gate electrode.