TRANSISTOR ELEMENT TERNARY INVERTER DEVICE INCLUDING THE SAME AND METHOD OF FACBRICATING THE SAME

摘要

The transistor element includes a substrate, a source region provided on the substrate, a drain region spaced apart from the source region in a direction parallel to the upper surface of the substrate, and a pair of constant current formation patterns provided adjacent to the source region and the drain region in the substrate, respectively. On the substrate, a gate electrode provided between the source region and the drain region, and a gate insulating film interposed between the gate electrode and the substrate, wherein the pair of constant current formation patterns form a constant current between the drain region and the substrate, The constant current is independent from the gate voltage applied to the gate electrode.