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RESISTANCE-AREA (RA) CONTROL IN LAYERS DEPOSITED IN PHYSICAL VAPOR DEPOSITION CHAMBER
RESISTANCE-AREA (RA) CONTROL IN LAYERS DEPOSITED IN PHYSICAL VAPOR DEPOSITION CHAMBER
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机译:物理气相沉积室中沉积的层中的电阻区(RA)控制
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摘要
Methods for depositing a dielectric oxide layer atop one or more substrates disposed in or processed through a PVD chamber are provided herein. In some embodiments, such a method includes: sputtering source material from a target assembly onto a first substrate while the source material is at a first erosion state and while providing a first amount of RF power to the target assembly to deposit a dielectric oxide layer onto a first substrate having a desired resistance-area; and subsequently sputtering source material from the target assembly onto a second substrate while the source material is at a second erosion state and while providing a second amount of RF power to the target assembly, wherein the second amount of RF power is lower than the first amount of RF power by a predetermined amount calculated to maintain the desired resistance-area.
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