Composition for forming a resist underlayer film, a resist underlayer film, a method for forming a resist underlayer film, a method for manufacturing a patterned substrate, and a compound

摘要

It is an object to provide a composition for forming a resist underlayer film capable of forming a resist underlayer film having excellent etching resistance, heat resistance, flatness and bending resistance, a resist underlayer film, a method for forming a resist underlayer film, a method for manufacturing a patterned substrate, and a compound . The composition for resist underlayer film formation containing the compound which has group represented by following formula (1), and a solvent. In the following formula (1), R 1 and R 2 are each independently a substituted or unsubstituted aryl group having 6 to 30 reduced numbers or a substituted or unsubstituted heteroaryl group having 5 to 30 reduced numbers. R 3 is a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms. * represents a binding site with a moiety other than the group represented by the following formula (1) in the compound.