Selective Deposition of Silicon Using a Deposition-Treatment-Etch Process

摘要

Methods are described for selective silicon film deposition on a substrate comprising a first surface and a second surface. More specifically, processes are described for depositing a film, treating the film to change some film properties, and selectively etching the film from various surfaces of a substrate. Deposition, treatment and etching may be repeated to selectively deposit a film on one of the two substrate surfaces.