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METHOD OF FORMING A DEVICE WITH FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS AND FINFET LOGIC DEVICES
METHOD OF FORMING A DEVICE WITH FINFET SPLIT GATE NON-VOLATILE MEMORY CELLS AND FINFET LOGIC DEVICES
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机译:用FinFET分离栅极非易失性存储器单元和FinFET逻辑器件形成设备的方法
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摘要
A method of forming a device with a silicon substrate having upwardly extending first and second fins. A first implantation forms a first source region in the first silicon fin. A second implantation forms a first drain region in the first silicon fin, and second source and drain regions in the second silicon fin. A first channel region extends between the first source and drain regions. A second channel region extends between the second source and drain regions. A first polysilicon deposition is used to form a floating gate that wraps around a first portion of the first channel region. A second polysilicon deposition is used to form an erase gate wrapping around first source region, a word line gate wrapping around a second portion of the first channel region, and a dummy gate wrapping around the second channel region. The dummy gate is replaced with a metal gate.
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