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Acoustic wave devices, acoustic wave device packages, multiplexers, high-frequency front-end circuits and communication devices

机译:声波设备,声波设备包,多路复用器,高频前端电路和通信设备

摘要

An acoustic wave device in which the frequency position of a higher-order mode propagating in a support substrate made of silicon is unlikely to become non-uniform. A support substrate 2 made of silicon, a piezoelectric body 4 provided directly or indirectly on the support substrate 2 and having a pair of opposite main surfaces, and on at least one main surface of the piezoelectric body 4 on to V 1, V 2, V 3 of V 1 in the x, derived from direct or may indirectly provided with the electrode that the wavelength determined by the pitch comprises a λ of the IDT electrode (5), following formula (2) The acoustic wave device (1) in which the sound velocity V Si =(V 1 ) 1/2 of the bulk wave propagating in the support substrate (2) is 5500 m/sec or more, which is defined by Ax 3 +Bx 2 +Cx+D=0 … Equation (2)
机译:一种声波装置,其中在由硅制成的支撑基板中传播的高阶模式的频率位置不太可能变得不均匀。 由硅制成的支撑衬底2,压电体4直接或间接地设置在支撑基板2上并具有一对相对的主表面,以及压电体4的至少一个主表面上至V 1,V 2, X中的V 1的V 3在X中,从直接导出或者可以间接地设置有由间距确定的波长的电极包括IDT电极(5)的λ,如公式(2)所述声波装置(1) 其中在支撑基板(2)中传播的散装波的声速V Si =(V 1)1/2为5500米/秒或更多,由AX 3 + Bx 2 + CX + D = 0限定。 等式(2)

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