首页> 外国专利> Transverse bias strength enhancement in dual free layer tunnel magnetoresistive read heads

Transverse bias strength enhancement in dual free layer tunnel magnetoresistive read heads

机译:双自由层隧道磁阻读头横向偏置强度增强

摘要

The present disclosure generally related to read heads having dual free layer (DFL) sensors. The DFL sensor and has a surface at the media facing surface (MFS). Behind the DFL sensor away from the MFS, is a rear hard bias (RHB) structure. The RHB structure is disposed between the shields as well. In between the DFL sensor and the RHB structure is insulating material. The insulating material is a multilayer structure. A first layer of the multilayer structure is composed of the same material as the tunnel magnetoresistive barrier layer, such as MgO, and is disposed adjacent the DFL sensor, yet spaced from the RHB structure. A second layer of the multilayer structure is a different insulating layer that is disposed adjacent the RHB structure, yet spaced from the DFL sensor. The multilayer structure helps improve areal density without degrading head stability and performance reliability by maintaining RHB coercivity.
机译:本公开一般与具有双自由层(DFL)传感器的读头有关。 DFL传感器并在介质面向表面(MFS)的表面。 在DFL传感器后面远离MFS,是后硬偏置(RHB)结构。 RHB结构也设置在屏蔽之间。 在DFL传感器之间和RHB结构之间是绝缘材料。 绝缘材料是多层结构。 第一层的多层结构由与隧道磁阻阻挡层(例如MgO)相同的材料构成,并且与DFL传感器相邻地设置,但从RHB结构间隔开。 第二层的多层结构是不同的绝缘层,其邻近RHB结构设置,但与DFL传感器间隔开。 多层结构通过维持RHB矫顽力,有助于改善不降低头部稳定性和性能可靠性的不降低头部密度。

著录项

  • 公开/公告号US11170809B1

    专利类型

  • 公开/公告日2021-11-09

    原文格式PDF

  • 申请/专利权人 WESTERN DIGITAL TECHNOLOGIES INC.;

    申请/专利号US202016907031

  • 发明设计人 MING MAO;CHEN-JUNG CHIEN;

    申请日2020-06-19

  • 分类号G11B5/39;

  • 国家 US

  • 入库时间 2022-08-24 22:08:32

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