Method for manufacturing high electron mobility transistor and high electron mobility transistor

摘要

A high electron mobility transistor (HEMT) comprises a channel semiconductor structure containing a stack of layers, the stack of layers being arranged in layers in order of magnitude of polarization of the material of the layer, by each pair of layers in the stack Multiple carrier channels are formed in the formed heterojunction. The stack of layers includes a first layer and a second layer. The magnitude of the polarization of the first layer is greater than the magnitude of the polarization of the second layer placed beneath the first layer in the stack, so that the first layer forms a stepped contour of the semiconductor structure. The width of the layer is smaller than the width of the second layer. The HEMT includes a source semiconductor structure containing a highly concentrated semiconductor material and a drain semiconductor structure containing a highly concentrated semiconductor material. The HEMT includes a source electrode, a drain electrode, and a gate electrode that modulates the conductivity of the carrier channel. The gate electrode has a stepped shape with a trend and a rise portion that follows the stepped contour of the semiconductor structure.