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METHOD OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSISTOR
METHOD OF MANUFACTURING HIGH ELECTRON MOBILITY TRANSISTOR AND HIGH ELECTRON MOBILITY TRANSISTOR
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机译:制造高电子迁移率晶体管和高电子迁移率晶体管的方法
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摘要
A method of manufacturing a high electron mobility transistor, comprising steps of: forming a first SiN film on a surface of a semiconductor stack consisting of a nitride semiconductor and including a barrier layer by a low pressure chemical vapor deposition method at a first furnace temperature of 700° C. or more and 900° C. or less; forming an interface oxide layer on the first SiN film by moisture and oxygen in the furnace at a second furnace temperature of 700° C. or more and 900° C. or less and a furnace pressure to 1 Pa or lower; and forming a second SiN film on the interface oxide layer by the low pressure chemical vapor deposition method at a third furnace temperature of 700° C. or more and 900° C. or less.
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