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Deposition mask defect cause determining system, evaporation mask defect cause determination method and program

机译:沉积掩模缺陷原因确定系统,蒸发掩模缺陷导致确定方法和程序

摘要

A deposition mask defect cause system to determine the cause of defects in a deposition mask having a substrate having a plurality of holes formed thereinA plurality of holes to be photographed with a plurality of holes including a normal hole portion and a defective hole portionA substrate portion imaged with the substrate surrounding the plurality of holes andImage acquisition section which acquires the imaging image of said deposition mask includingA first area calculating section for calculating an area of a normal hole portion included in an imaging image acquired by an image acquisition section and aA second area calculating section for calculating the area of a defective hole portion included in the imaging image acquired by the image acquisition section andArea ratio calculation section which calculates the area ratio which is the proportion of the area of the defective hole part to the area of the normal hole part, andComprises a defect cause identifying portion for identifying a cause of a defective hole portionDefect cause specific partIfCause of the defective hole partIdentify the first or second causeIf the area ratio is less than 1Cause of the defective hole partIt is identified that the cause is neither the first cause nor the second cause.
机译:沉积掩模缺陷导致系统以确定沉积掩模中的缺陷的原因,该沉积掩模具有具有多个孔的衬底,其中形成多个孔,以用多个孔拍摄,该孔包括正常孔部分和缺陷的孔部分基板部分成像利用围绕多个孔的基板和剪模地获取部分,该沉积掩模的成像部分包括第一区域计算部分,用于计算由图像获取部分和AA第二区域计算获取的成像图像中包括的成像图像的正常孔部分的区域用于计算由图像获取部分AndareA比率计算部分获取的成像图像中包括的成像图像中包括的缺陷孔部分的区域,该区域比率计算为常规孔部件的面积的缺陷孔部分的面积的比例,并符合缺陷导致识别识别部分G缺陷孔部分的原因导致缺陷孔的特定偏见,识别出面积比的第一或第二导致缺陷孔部分的1次数小于缺陷孔段的第一个或第二次数。原因既不是第一个原因也不是第二原因。

著录项

  • 公开/公告号JPWO2020218396A1

    专利类型

  • 公开/公告日2021-10-28

    原文格式PDF

  • 申请/专利权人 凸版印刷株式会社;

    申请/专利号JP20210516192

  • 发明设计人 山田 清治;柴田 泰充;藤戸 大生;

    申请日2020-04-23

  • 分类号C23C14/04;C23C14/12;C23C14/24;G01N21/956;

  • 国家 JP

  • 入库时间 2022-08-24 21:58:33

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