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Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manufacturing Method Thereof
Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manufacturing Method Thereof
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机译:合并PIN肖特基(MPS)二极管,具有多个电池设计及其制造方法
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摘要
A semiconductor device may include a substrate having a first conductivity type; an epitaxial layer having the first conductivity type deposited on one side of the substrate; a plurality of regions having a second conductivity type formed under a top surface of the epitaxial layer; a first Ohmic metal patterned and deposited on top of the regions with the second conductivity type; a Schottky contact metal deposited on top of the entire epitaxial layer to form a Schottky junction; and a second Ohmic metal deposited on a backside of the substrate, wherein the regions include one or more wide regions, each having different widths that can be optimized to simultaneously obtain high surge current capability and preserve a low forward voltage drop and reverse leakage current.
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