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Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof
Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof
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机译:用等离子体扩散层合并Pin Schottky(MPS)二极管及其制造方法
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摘要
A method for manufacturing a merged PiN Schottky (MPS) diode may include steps of providing a substrate having a first conductivity type; forming an epitaxial layer with the first conductivity type on top of the substrate; forming a plurality of regions with a second conductivity type under a top surface of the epitaxial layer; forming a plasma spreading layer; depositing and patterning a first Ohmic contact metal on the regions with the second conductivity type; depositing a Schottky contact metal on top of the entire epitaxial layer; and forming a second Ohmic contact metal on a backside of the substrate. In another embodiment, the step of forming a plurality of regions with a second conductivity type may include steps of depositing and patterning a mask layer on the epitaxial layer, implanting P-type dopant into the epitaxial layer, and removing the mask layer.
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