首页>
外国专利>
Millimeter-wave Switch Structure with Low Insertion Loss using Parallel Resonance Structure
Millimeter-wave Switch Structure with Low Insertion Loss using Parallel Resonance Structure
展开▼
机译:使用并联谐振结构具有低插入损耗的毫米波开关结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
A millimeter wave band switch structure having a low insertion loss using a parallel resonance structure is disclosed. A millimeter wave band switch circuit according to an embodiment of the present invention is a millimeter wave band switch circuit having a parallel structure, comprising: a first transistor having a source terminal connected to a transmission line of the switch in a parallel structure; a second transistor having a drain terminal connected in series with a drain terminal of the first transistor; and a short stub having one end connected to the source terminal of the first transistor and the other end connected to the source terminal of the second transistor.
展开▼