Stack-shaped photonic III-V semiconductor component (10), comprising - a first metallic connection contact layer (20) formed at least in some regions, - a highly doped first semiconductor contact layer (16) of a first conductivity type formed at least in some regions with a dopant concentration of at least 1 · 1018cm-3 and with a first lattice constant, - an absorption area (12) of the first conductivity type with a dopant concentration of 8 · 1011cm-3- 8 · 1014cm-3, a layer thickness (D12) of 80 µm - 2000 µm or 500 µm - 2000 µm or 900 µm - 2000 µm, with a first energy band gap and with the first lattice constant, - a highly doped second semiconductor contact layer (14) of a second conductivity type, formed at least in regions, with a dopant concentration of at least 1 · 1018 cm-3 and a layer thickness (D14) of at most 100 µm or at most 50 µm, - a second metallic connection formed at least in certain areas Contact layer (18), wherein the first semiconductor contact layer (16) is designed as a mesa structure with an underside, an upper side, a mesa width (B16) and a mesa height (D16) and the underside of the first semiconductor contact layer (16) is arranged on or above a first surface section of an upper side of the absorption area (12) with a width that corresponds to the mesa width (B16), - the second semiconductor contact layer (14) is arranged with an upper side facing the absorption area (12) below the absorption area (12) and - the second metallic connection contact layer (18) is materially connected to an underside of the second semiconductor contact layer (14), photonic III-V semiconductor component (10) a III-V semiconductor passivation layer (22) m it has the first lattice constant and a second energy band gap which differs from the first energy band gap, the III-V semiconductor passivation layer (22) having the first or the second conductivity type and a dopant concentration of 1 · 1014cm-3 · 5 · 1018cm-3, - the III-V semiconductor passivation layer (22) at a first distance (A1) of at least 0.2 μm or at least 2 μm or of at least 10 μm or of at least 20 μm or of at least 40 μm from the mesa structure of the first semiconductor contact layer the upper side of the absorption area (12) and is connected to the upper side of the absorption area (12) in a materially bonded manner.
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