Stacked photonic III-V semiconductor component, comprising a second metallic connection contact layer formed at least in certain areas, a highly doped first semiconductor contact area of a first conductivity type, a very weakly doped absorption area of the first or second conductivity type with a layer thickness of 20 μm - 2000 μm, a first formed at least in certain areas metallic connection contact layer, the first semiconductor contact region extending trough-shaped into the absorption region, the second metallic connection contact layer being materially connected to the first semiconductor contact region and the first metallic connection contact layer being arranged below the absorption region. In addition, the stacked photonic III-V semiconductor component has a doped III-V semiconductor passivation layer of the first or second conductivity type, the III-V semiconductor passivation layer being arranged at a first distance of at least 10 μm from the first semiconductor contact region on the upper side of the absorption region .
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