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METHOD AND DEVICE FOR IMPLANTING IONS IN WAFERS
METHOD AND DEVICE FOR IMPLANTING IONS IN WAFERS
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机译:晶圆中植入离子的方法和装置
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摘要
A method comprising the irradiation of a wafer by an ion beam that passes through an implantation filter. The wafer is heated to a temperature of more than 200° C. The wafer is a semiconductor wafer including SiC, and the ion beam includes aluminum ions.
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