Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes

摘要

A method of forming a ferroelectric/anti-ferroelectric (FE/AFE) dielectric layer is provided. The method includes forming a metal electrode layer on a substrate, wherein the metal electrode layer has an exposed surface with at least 80% {111} crystal face, and forming an FE/AFE dielectric layer on the exposed surface of the metal electrode layer, wherein the FE/AFE dielectric layer is a group 4 transition metal oxide.