Magnetic tunnel junction device with magnetic layer of easy-cone state

摘要

Provided are a magnetic tunnel junction device and a method of fabricating the same. The magnetic tunnel junction device includes a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulating layer disposed on the free magnetic layer. The heavy metal layer includes platinum (Pt), the free magnetic layer includes cobalt (Co), a magnetization state of the free magnetic layer has an easy-cone state, the free magnetic layer has a positive first-order perpendicular magnetic anisotropy constant and a negative second-order perpendicular magnetic anisotropy constant, and the tunnel insulating layer includes magnesium oxide (MgO).