MAGNETIC TUNNEL JUNCTION DEVICE HAVING MAGNETIC LAYER IN EASY-CONE STATE

摘要

The present invention provides a magnetic tunnel junction device and a manufacturing method therefor. The magnetic tunnel junction device comprises a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulation layer disposed on the free magnetic layer. The heavy metal layer may be made of platinum, the free magnetic layer may be made of cobalt (Co), the magnetized state of the free magnetic layer may have a cone state, the free magnetic layer may have a positive primary perpendicular magnetic anisotropic constant and a negative secondary perpendicular magnetic anisotropic constant, and the tunnel insulation layer may be made of MgO.