- Magnetic Tunnel Junction Device with a magnetic layer of easy-cone state

摘要

The present invention provides a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device comprises: a heavy metal layer which is Pt; a free magnetic layer which is Co, and is disposed on the heavy metal layer; and a tunnel insulating layer which is MgO, and is disposed on the free magnetic layer. The free magnetic layer has a magnetization state in a cone state, and has a positive first order perpendicular magnetic anisotropy constant and a negative second order perpendicular magnetic anisotropy constant.