Method for manufacturing oxide thin film transistor according to femtosecond laser surface treatment and oxide thin film transistor manufactured by the manufacturing method

摘要

The present invention relates to a method of manufacturing an oxide thin film transistor according to a femtosecond laser surface treatment and an oxide thin film transistor manufactured by the method, and more particularly, by femtosecond laser surface treatment of the surface of a channel layer of oxide with an optimal process time. , it is possible to manufacture an oxide channel layer with high uniformity, a flat surface area and improved optical properties, and an oxide thin film transistor with improved electrical and environmental stability through improved charge mobility and leakage current, and improved short-term current holding stability. It's about providing.