首页> 外国专利> Wafer structure with capacitive chip interconnection, method for manufacturing the same, and chip structure with capacitive chip interconnection

Wafer structure with capacitive chip interconnection, method for manufacturing the same, and chip structure with capacitive chip interconnection

机译:具有电容芯片互连的晶圆结构,制造方法的方法和电容芯片互连的芯片结构

摘要

A wafer structure, a method for manufacturing the same and a chip structure are provided. A first capacitor plate is arranged in a first chip, a second capacitor plate is arranged in a second chip, and the first chip is stacked together via bonding layers with the second chip with a front surface of the first chip facing toward a front surface of the second chip. In this way, a capacitor structure formed by the first capacitor plate, the second capacitor plate and dielectric materials provided therebetween is formed while bonding the first chip and second chip together, and the capacitor plate and the dielectric materials may be formed while forming a device interconnection structure in the chip, such that no additional process is required, thereby improving device integration and process integration.
机译:提供了一种制造方法和芯片结构的晶片结构。 第一电容器板布置在第一芯片中,第二电容器板布置在第二芯片中,并且第一芯片通过粘合层堆叠在一起,其中第二芯片具有前表面的前表面朝向前表面 第二芯片。 以这种方式,在将第一芯片和第二芯片粘合在一起的同时形成由第一电容器板,设置在其间的第二电容器板和介电材料的电容器结构,并且可以在形成装置的同时形成电容器板和电容器板和介电材料 芯片中的互连结构,使得不需要额外的过程,从而提高了设备集成和过程集成。

著录项

  • 公开/公告号US11114414B2

    专利类型

  • 公开/公告日2021-09-07

    原文格式PDF

  • 申请/专利号US201916582620

  • 发明设计人 YANG LI;SHENG HU;

    申请日2019-09-25

  • 分类号H01L25/065;H01L21/78;H01L23/522;H01L23/528;H01L23;H01L25;H01L49/02;

  • 国家 US

  • 入库时间 2022-08-24 20:52:09

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