Manufacturing process of aluminum gallium nitride (AlGaN) nanostructures

摘要

The invention relates to a method for manufacturing AlGaN nanostructures (BQ) comprising the following steps: at least one step of alternating epitaxial growth (AC), said step of alternating epitaxial growth being carried out at a defined epitaxial temperature and comprising: an epitaxial growth substep (CA1) of GaN; andan AlyGa1-yN epitaxial growth substep (CA2) performed after the GaN epitaxial growth substep, y being a number greater than 0 and less than or equal to 1; said at least one alternating epitaxial growth step leading to the formation of intermediate nanostructures (BQI) in a pseudo-alloy of AlzGa1-zN resulting from the combination of the epitaxial layers, z being a number less than y; - an annealing step at an annealing temperature greater than or equal to 820 ± 20 ° C or greater by at least 100 ° C compared to the epitaxy temperature and leading to the formation of nanostructures (BQ) in AlzGa1-zN. Figure for the abstract: figure 2