THREE-DIMENSIONAL MEMORY DEVICES WITH ENLARGED JOINT CRITICAL DIMENSION AND METHODS FOR FORMING THE SAME

摘要

A 3D memory device (200, 300) and a method for forming the device are provided. The 3D memory device (200, 300) with an enlarged joint critical dimension includes a substrate (202, 302), a memory stack (207, 307) having a plurality of interleaved conductor layers (209, 309) and dielectric layers (206, 306) on the substrate (202, 302), and a memory string extending vertically through the first memory stack and having a memory film (210, 310) along a sidewall of the memory string. The memory film (210, 310) includes a discontinuous blocking layer (212, 312) interposed by the dielectric layers (206, 306).