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THREE-DIMENSIONAL MEMORY DEVICES WITH ENLARGED JOINT CRITICAL DIMENSION AND METHODS FOR FORMING THE SAME
THREE-DIMENSIONAL MEMORY DEVICES WITH ENLARGED JOINT CRITICAL DIMENSION AND METHODS FOR FORMING THE SAME
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机译:具有扩大关节关键尺寸的三维存储器件和用于形成相同的方法
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摘要
Embodiments of three-dimensional (3D) memory devices with an enlarged joint critical dimension and methods for forming the same are disclosed. In an example, a 3D memory device is disclosed. The 3D memory device includes a substrate, a memory stack having a plurality of interleaved conductor layers and dielectric layers on the substrate, and a memory string extending vertically through the first memory stack and having a memory film along a sidewall of the memory string. The memory film includes a discontinuous blocking layer interposed by the dielectric layers.
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