Dry etching gas composition containing sulfur-containing fluorocarbon compound and dry etching method using same

摘要

To provide a novel etching gas composition capable of selectively etching _{SiO 2} with respect to low-k materials (Low-k materials (SiON, SiCN, SiOCN, SiOC)) comprising sulfur-containing compounds. General formula (1): CxFySz (wherein x, y and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2), including saturated and cyclic sulfur-containing fluorocarbon compounds A dry etching gas composition.