DRY ETCHING GAS COMPOSITION CONTAINING SULFUR-CONTAINING FLUOROCARBON COMPOUND, AND DRY ETCHING METHOD USING SAID DRY ETCHING GAS COMPOSITION

摘要

The purpose of the present invention is to provide a novel etching gas composition that contains a sulfur-containing compound, and that can selectively etch SiO₂ with respect to a low dielectric constant material (Low-k material (SiON, SiCN, SiOCN, SiOC)). This dry etching gas composition contains a saturated and cyclic sulfur-containing fluorocarbon compound represented by general formula (1): CxFySz (in the formula, x, y, and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2).