DRY ETCHING GAS COMPOSITION CONTAINING SULFUR-CONTAINING FLUOROCARBON COMPOUND, AND DRY ETCHING METHOD USING SAID DRY ETCHING GAS COMPOSITION

摘要

Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC).;A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2 ≤ x ≤ 5, y ≤2x, and 1 ≤ z ≤ 2.